Study of nickel silicide thermal stability using silicon-on-insulator substrate for nanoscale complementary metal oxide semiconductor field-effect transisor device

Japanese Journal of Applied Physics

Volumn 47, Issue 10 PART 1, 2008, Pages 7775-7779

  Kim, Ji Young ^a   Kim, Cho Rong ^a   Lee, Jaeyeop ^a   Park, Won Wook ^a   Leem, Jae Young ^a   Ryu, Hyukhyun ^a   Lee, Won Jae ^b   Zhang, Ying Ying ^b   Jung, Soon Yen ^b   Lee, Hi Deok ^b   Kim, In Kyum ^c   Kang, Suk June ^c   Yuk, Hyung Sang ^c   Lee, Keunwoo ^d   Jeon, Sunyeol ^d   Jeon, Hyeongtag ^d  

^a Inje University   (South Korea)

^b Chungnam National University   (South Korea)

^c LG Siltron Inc   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

CMOS; Nickel silicide; Postsilicidation annealing; SOI; Thermal stability

Indexed keywords

AGGLOMERATION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHARGE COUPLED DEVICES; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; ENAMELS; FIELD EFFECT TRANSISTORS; METAL ANALYSIS; METALLIC COMPOUNDS; MICROSENSORS; MOS DEVICES; NANOSTRUCTURED MATERIALS; NICKEL ALLOYS; NICKEL OXIDE; PALLADIUM; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICIDES; SILICON ALLOYS; SOLIDS; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CMOS; NICKEL SILICIDE; POSTSILICIDATION ANNEALING; SOI; THERMAL STABILITY;

NICKEL;

EID: 62249094492     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7775     Document Type: Article

References (23)

1. C. Hu: Jpn. J. Appl. Phys. 33 (1994) 365.
2. L.T. Su, H. Hu, and J.E. Chung: IEEE Electron Device Lett. 15 (1994) 363.
3. T. Ichimori and N. Hirashita: IEEE Trans. Electron Device 49 (2002) 2296.
4. S. Y. Jung, Y. J. Kim, W. J. Lee, Y. Y. Zhang, Z. Zhong, S. G. Li, G. W. Lee, J. S. Wang, Y. C. Kim, J. Y. Kim, H. H. Ryu, and H. D. Lee: J. Korean Phys. Soc. 50 (2007) 1883.
5. C. H. Jang, D. O. Shin, S. I. Baik, Y. W. Kim, Y. J. Song, K. H. Shim, and N. E. Lee: Jpn. J. Appl. Phys. 44 (2005) 4805.
6. K. N. Tu, E. Alessandrini, W. K. Chu, H. Krautle, and J. Mayer: Proc. 6th Int. Vacuum Congr., Kyoto, 1974, Jpn. J. Appl. Phys. 13 (1974) Suppl. 2-1, p. 669.
7. Y. J. Kim, C. J. Choi, R. J. Jung, S. Y. Oh, J. G. Yun, W. J. Lee, H. H. Ji, J. S. Wang, and H. D. Lee: J. Electrochem. Soc. 153 (2006) G35.
8. S.-Y. Oh, J.-G. Yun, B.-F. Huang, Y.-J. Kim, H.-H. Ji, U.-S. Kim, H.-S. Cha, S.-B. Heo, J.-G. Lee, J.-S. Wang, and H.-D. Lee: Jpn. J. Appl. Phys. 44 (2005) 2142.
9. D. Mangelinck, P. Gas, J. M. Gay, B. Pichaud, and O. Thomas: J. Appl. Phys. 84 (1998) 2583.
10. I. Doi, R. C. Teixeira, R. E. Santos, J. A. Diniz, J. W. Swart, and S. G. Santos Filho: Microelectron. Eng. 82 (2005) 485.
11. R. N. Wang and J. Y. Feng: J. Phys.: Condens. Matter 15 (2003) 1935.
12. D. Mangelinck, J. Y. Dai, J. S. Pan, and S. K. Lahiri: Appl. Phys. Lett. 75 (1999) 1736.
13. J. F. Liu, J. Y. Feng, and J. Zhu: Appl. Phys. Lett. 80 (2002) 270.
14. L. W. Cheng, S. L. Cheng, J. Y. Chen, L. J. Chen, and B. Y. Tsui: Thin Solid Films 355-356 (1999) 412.
15. C. J. Tsai, P. L. Chung, and K. H. Yu: Thin Solid Films 365 (2000) 72.
16. T. Hou, T. Lei, and T. Chao: IEEE Electron Device Lett. 20 (1999) 572.
17. Y. Kim, C. Choi, S. Oh, J. Yun, W. Lee, H. Ji, J. Wang, and H. Lee: Solid State Phenom. 121-123 (2007) 1261.
18. P. Su, S. Cheng, W. Wu, and L. Chen: Adv. Sci. Technol. 30 (2003) 209.
19. S. Chiu, Y. Chu, C. Tsai, and H. Lee: J. Electrochem. Soc. 151 (2004) G452.
20. F. F. Zhao, J. Z. Zheng, Z. X. Shen, T. Osipowicz, W. Z. Gao, and L. H. Chan: Microelectron. Eng. 71 (2004) 104.
21. Y. S. Li, P. S. Lee, and K. L. Pey: Thin Solid Films 462-463 (2004) 209.
22. M. Y. Wang, C. W. Chang, C. M. Wu, C. T. Lin, C. H. Hsieh, W. S. Shue, and M. S. Liang: VLSI Technology Dig., 2003, 11B-3, p. 157.
23. X.-P. Qu, C. Detavernier, R. L. Meirhaeghe, G.-P. Ru, and B.-Z. Li: Proc. 6th Int. Conf. Solid-State Integrated-Circuit Technology, 2001, Vol. 1, p. 501.