The effect of triple capping layer (Ti/Ni/Tin) on the electrical and structural properties of nickel monosilicide

Journal of the Electrochemical Society

Volumn 153, Issue 1, 2006, Pages

  Kim, Yong Jin ^a   Choi, Chel Jong ^b   Jung, Ran Ju ^c   Oh, Soon Young ^a   Yun, Jang Gn ^a   Lee, Won Jae ^a   Ji, Hee Hwan ^a   Wang, Jin Suk ^a   Lee, Hi Deok ^a  

^a Chungnam National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MORPHOLOGY; SUBSTRATES; THERMAL EFFECTS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL AND STRUCTURAL PROPERTIES; GRAIN BOUNDARY ENERGY; NICKEL MONOSILICIDE; TRIPLE CAPPING LAYER;

NICKEL COMPOUNDS;

EID: 33645529841     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2130695     Document Type: Article

References (15)

1. Y. Taur, J. Sun, D. Moy, L. K. Wang, B. Davari, S. P. Klepner, and C. Y. Ting, IEEE Trans. Electron Devices, 34, 575 (1987).
2. E. G. Colgan, J. P. GamBino, and Q. Z. Hong, Mater. Sci. Eng., R., 16, 43 (1996).
3. F. Deng, R. A. Johnson, P. M. Asbeck, S. S. Lau, W. B. Dubbelday, T. Hsiao, and J. Woo, J. Appl. Phys., 81, 8047 (1997).
4. T. Morimoto, T. Ohguro, H. Sasaki Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai, IEEE Trans. Electron Devices, 42, 915 (1995).
5. T. Morimoto, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai, Tech. Dig. - Int. Electron Devices Meet., 1991, 653.
6. J. Chen, J. P. Colinge, D. Flandre, R. Gillon, J. P. Raskin, and D. Vanhoenacker, J. Electrochem. Soc., 144, 2437 (1997).
7. T. Ohguro, S. Nakamura, E. Morifuji, M. Ono, T. Yoshitomi, M. Saito, H. S. Momose, and H. Iwai, Tech. Dig. - Int. Electron Devices Meet., 1995, 453.
8. C. J. Choi, Y. W. Ok, S. S. Hullavarad, T. Y. Seong, K. M. Lee, J. H. Lee, and Y. J. Park, J. Electrochem. Soc., 149, G517 (2002).
9. T. Ohguro, T. Morimoto, Y. Ushiku, and H. Iwai, Extended Abstracts of 1993 Conference on Solid State Devices and Materials (SSDM'93), p. 192 (1993).
10. T. H. Hou, T. F. Lei, and T. S. Chao, IEEE Electron Device Lett., 20, 572 (1999).
11. C. Laviron, R. Lindsay, A. Michallet, A. Halimoui, and E. Granneman, Abstract 880, The Electrochemical Society Meeting Abstracts, 2003-1, Paris, France, April 27-May 2, 2003.
12. C. J. Choi, Y. W. Ok, T. Y. Seong, and H. D. Lee, Jpn. J. Appl. Phys., Part 1, 41, 1969 (2002).
13. J. S. Kwak, E. J. Chi, J. D. Choi, S. W. Park, H. K. Baik, M. G. So, and S. M. Lee, J. Appl. Phys., 78, 983 (1995).
14. K. Maex, Mater. Sci. Eng., R., 11, 53 (1995).
15. C. C. Wang, C. J. Lin, and M. C. Chen, J. Electrochem. Soc., 150, G557 (2003).