Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

IEEE Electron Device Letters

Volumn 20, Issue 11, 1999, Pages 572-573

  Hou, Tuo Hung ^a   Lei, Tan Fu ^a   Chao, Tien Sheng ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LEAKAGE CURRENTS; OXIDATION; TITANIUM;

NICKEL SILICIDED JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0033221806     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.798047     Document Type: Article

References (5)

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2. T. Mogami and H. Wakabayashi, "Low-resistance self aligned Ti silicide technology for sub-quarter-micron CMOS devices," IEEE Trans. Electron Devices, vol. 43, p. 932, 1996.
3. T. Morimoto, T. Ohguro, H. S. Momose, T. Linuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, and M. Tsuchiaki, "Self-aligned nickel-mono-silicide technology for high speed deep sub-micrometer logic CMOS ULSI," IEEE Trans. Electron Devices, vol. 42, p. 915, 1995.
4. T. Ohguro, T. Morimoto, Y. Ushiku, and H. Iwai, "Analysis of enormously large junction leakage current in nickel-silicided n-type diffused layers and its improvement," in Ext. Abst. SSDM, 1993, p. 192.
5. T. Ohguro, S. Nakamura, E. Morifuji, M. Ono, T. Yoshitomi, M. Saito, H. S. Momose, and H. Iwai, "Nitrogen-doped nickel monosilicide technology for deep submicron CMOS salicide," in IEDM Tech. Dig., 1995, p. 453.