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Applied Physics Letters

Volumn 80, Issue 2, 2002, Pages 270-272

Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system

(3) Liu, J F a Feng, J Y a Zhu, J a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CLASSICAL NUCLEATION THEORY; SHEET RESISTANCE MEASUREMENTS; SI FILMS; THICKNESS DEPENDENCE; ULTRA SHALLOW JUNCTION;

ELECTRIC RESISTANCE MEASUREMENT; PLATINUM; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

TEMPERATURE;

EID: 79956059055 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1434311 Document Type: Article

Times cited : (30)

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