Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 292-295

  Rendakova, S V ^a,b   Nikitina, I P ^b   Tregubova, A S ^b   Dmitriev, V A ^c,d  

^a Crystal Growth Research Center   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c HOWARD UNIVERSITY   (United States)

^d TDI Inc   (United States)

Author keywords

Dislocations; Liquid phase epitaxy; Micropipes; Silicon carbide

Indexed keywords

EID: 0001038075     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0402-y     Document Type: Article

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