High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4242-4248

  Kimoto, Tsunenobu ^a   Miyamoto, Nao ^a   Schöner, Adolf ^a   Saitoh, Akira ^a   Matsunami, Hiroyuki ^a   Asano, Katsunori ^b   Sugawara, Yoshitaka ^b  

^a KYOTO UNIVERSITY   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; B ION IMPLANTATION; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEEP LEVEL; ELECTRICAL ACTIVATION; HIGH BREAKDOWN VOLTAGE; HIGH ENERGY; HIGH-TEMPERATURE ANNEALING; I-LAYER; IMPLANTATION ENERGIES; IMPLANTED LAYERS; P-N JUNCTION; PIN DIODE; RESIDUAL DAMAGE; REVERSE CHARACTERISTICS; RUTHERFORD BACKSCATTERING CHANNELING; SIC EPILAYERS;

ANNEALING; HIGH ENERGY PHYSICS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DIODES; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 0036536195     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459096     Document Type: Article

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