Four-dimensional STEM-EELS: Enabling nano-scale chemical tomography

Ultramicroscopy

Volumn 109, Issue 4, 2009, Pages 326-337

  Jarausch, Konrad ^a   Thomas, Paul ^b   Leonard, Donovan N ^c   Twesten, Ray ^b   Booth, Christopher R ^b  

^a Hitachi High Technologies America   (United States)

^b GATAN INC   (United States)

^c APPALACHIAN STATE UNIVERSITY   (United States)

Author keywords

Electron energy loss spectroscopy; Scanning transmission electron microscopy; Spectrum imaging; Tilt series; Tomography

Indexed keywords

CHEMICAL STATE INFORMATIONS; CRYSTALLOGRAPHIC AXES; DATA SETS; ELECTRON-BEAM; FINE STRUCTURES; HIGH-ANGLE ANNULAR DARK FIELDS; LINEAR PROJECTIONS; LOW LOSS; MATERIAL ANISOTROPIES; MULTI-DIMENSIONAL DATASETS; NANO-MATERIALS; NANO-SCALE; NANO-SCALE STRUCTURES; ROTATION ANGLES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SPATIAL DIMENSIONS; SPECTRUM IMAGES; SPECTRUM IMAGING; STEM-EELS; STEM-HAADF; STRUCTURE-PROPERTY RELATIONSHIPS; SYSTEMATIC CHANGES; THREE DIMENSIONS; THREE-DIMENSIONAL (3D); TILT SERIES; TOMOGRAPHIC RECONSTRUCTION; ZNO; ZNO THIN FILMS;

AUGER ELECTRON SPECTROSCOPY; DIAGNOSTIC RADIOGRAPHY; DISSOCIATION; ELECTRIC FIELD MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRON MICROSCOPES; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; NANOSTRUCTURED MATERIALS; PROBES; ROTATION; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL PROCESSING; SILICON; SINGLE CRYSTALS; THREE DIMENSIONAL; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 61849116224     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.12.012     Document Type: Article

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