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Volumn 59, Issue 18, 2005, Pages 2374-2377

Model for micropipe formation in 6H-SiC single crystal by sublimation method

Author keywords

Crystal growth; Defects; Inclusion; Micropipe; Stacking fault

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ETCHING; EVAPORATION; MATHEMATICAL MODELS; SILICON CARBIDE; SOLUTIONS; SUBLIMATION; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 19844372935     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2005.01.089     Document Type: Article
Times cited : (14)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.