The role of oxygen in electron cyclotron resonance etching of silicon carbide

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 9-11

  Xia, J H ^a   Rusli, ^a   Choy, S F ^b   Gopalakrishan, R ^b   Tin, C C ^c   Ahn, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c AUBURN UNIVERSITY   (United States)

Author keywords

Auger electron spectroscopy; Electron cyclotron resonance; Etching; Oxygen; Silicon carbide

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON CYCLOTRON RESONANCE; ETCHING; FLUORINE; SILICON CARBIDE; SURFACE ROUGHNESS;

CHEMICAL ETCHING; ETCH RATE; GAS FLOW CONSTANT;

OXYGEN;

EID: 30344467824     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.009     Document Type: Conference Paper

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