Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 306-311

  Jiang, Liudi ^a   Cheung, R ^a  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Etch rate; Inductively coupled plasma; Silicon carbide

Indexed keywords

ADDITION REACTIONS; ARGON; CHEMICAL MODIFICATION; ETCHING; INDUCTIVELY COUPLED PLASMA; MIXTURES; OXYGEN; REDUCTION; SILICON CARBIDE; SULFUR COMPOUNDS;

BAND GAPS; ETCH RATES; GAS MIXTURES;

MICROELECTRONICS;

EID: 17344374716     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00116-9     Document Type: Conference Paper

References (11)

1. Mehregany M., Zorman C.A., Rajan N., Wu C.H. Proc. IEEE. 86:1998;1594.
2. Pang S.W. Surface Damage Induced by Dry Etching, Handbook of Advanced Plasma Processing Technologies. Shul R.J., Pearton S.J. 2000;Springer-Verlag, Berlin, Hiedelberg, New York.
3. Wang Y., Henry J.A., Zehnder A.T., Hines M.A. J. Phys. Chem. B. 107:2003;14270.
4. Chabert P. J. Vac. Sci. Technol. B. 19:2001;1339.
5. Khan F.A., Adesida I. App. Phys. Lett. 75:1999;2268.
6. Jiang L., Cheung R., Brown R., Mount A. J. Appl. Phys. 93:2003;1376.
7. So M.S., Lim S.G., Jackson T.N. J. Vac. Sci. Technol. B. 17:1999;2055.
8. Camara N., Zekentes K. Solid-State Electron. 46:2002;1959.
9. Plank N.O.V., Blauw M.A., van der Drift E.W.J.M., Cheung R. J. Phys. D. 36:2003;482.
10. Briggs D., Seah M.P. Practical Surface Analysis. 1983;Wiley, New York.
11. Khan F.A., Roof B., Zhou L., Adesida I. J. Electron. Mater. 30:2001;212.