Etching profile of silicon carbide in a NF3/CH4 inductively coupled plasma

Microelectronic Engineering

Volumn 71, Issue 3-4, 2004, Pages 329-334

  Kim, Byungwhan ^a   Lee, Suk Yong ^b   Lee, Byung Teak ^b  

^a Sejong University   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Plasma etching; Profile; Silicon carbide

Indexed keywords

INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; MAGNETRON SPUTTERING; METHANE; NITROGEN COMPOUNDS; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

PROFILE; RADICAL BEHAVIOR;

MICROELECTRONIC PROCESSING;

EID: 1842740267     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.02.095     Document Type: Article

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