A study on Si nanocrystal formation in Si-implanted SiO2 films by x-ray photoelectron spectroscopy

Journal of Physics D: Applied Physics

Volumn 36, Issue 19, 2003, Pages

  Liu, Y ^a   Chen, T P ^a   Fu, Y Q ^b   Tse, M S ^a   Hsieh, J H ^b   Ho, P F ^a   Liu, Y C ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; PYROLYSIS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON WAFERS; STRUCTURE (COMPOSITION); THERMOOXIDATION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICA FILMS; SILICON ION IMPLANTATION; SILICON NANOCRYSTAL; THERMAL ANNEALING;

NANOSTRUCTURED MATERIALS;

EID: 0142071738     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/19/L02     Document Type: Letter

References (15)

1. Lalic N and Linnros J 1999 J. Lumin. 80 263
2. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbé E F and Chan K 1996 Appl. Phys. Lett. 68 1377
3. Shi Y, Saito K, Ishikuro H and Hiramoto T 1998 J. Appl. Phys. 84 2358
4. Boer E A, Brongersma M L, Atwater H A, Flagan R C and Bell L D 2001 Appl. Phys. Lett. 79 791
5. Choi S H and Elliman R G 1999 Appl. Phys. Lett. 75 968
6. Kim Y-H, Hwang M S, Kim H J, Kim J Y and Lee Y 2001 J. Appl. Phys. 90 3367
7. Lucovsky G, Manitini M J, Srivastava J K and Irene E A 1987 J. Vac. Sci. Technol. B 5 530
8. Ajioka T and Ushio S 1986 Appl. Phys. Lett. 48 1398
9. Iacona F, Lombardo S and Campisano S U 1996 J. Vac. Sci. Technol. B 14 2693
10. Iwata S and Ishizaka A 1996 J. Appl. Phys. 79 6653
11. Himpsel F J, McFeely F R, Taleb-Ibrahimi A, Yarmoff J A and Hollinger G 1988 Phys. Rev. B 38 6084
12. Grunthaner P J, Hecht M H, Grunthaner F J and Johnson N M 1987 J. Appl. Phys. 61 629
13. Green M L, Gusev E P, Degraeve R and Garfunkel E L 2001 J. Appl. Phys. 90 2057
14. Zacharias M, Heitmann J, Scholz R, Kahler U, Schmidt M and Bläsing J 2002 Appl. Phys. Lett. 80 661
15. Hinds B J, Wang F, Wolfe D M, Hinkle C L and Lucovsky G 1998 J. Vac. Sci. Technol. B 16 2171