A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 268-271

  Porti, M ^a   Avidano, M ^a   Nafriia M ^a   Aymerich, X ^a   Carreras, J ^b   Garrido, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Atomic force microscopy; MOS structure; Semiconductor memory; Silicon nanocrystal memory

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MOS STRUCTURE; SEMICONDUCTOR MEMORY; SILICON NANOCRYSTAL MEMORY;

MOS DEVICES;

EID: 19944419805     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.079     Document Type: Conference Paper

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