Photoluminescence of silicon oxide films enriched by Si or Ge

Journal of Luminescence

Volumn 102-103, Issue SPEC, 2003, Pages 557-561

  Torchynska, T V ^a   Aguilar Hernandez, J ^a   Hernández, L Schacht ^a   Goldstein, Y ^b   Many, A ^b   Jedrzejewski, J ^b   Kolobov, A V ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Nanocrystalline Ge; Nanocrystalline Si; Photoluminescence; Quantum confinement

Indexed keywords

GERMANIUM; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS;

QUANTUM CONFINEMENT;

PHOTOLUMINESCENCE;

EID: 19244379014     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(02)00607-5     Document Type: Conference Paper

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