Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

Semiconductor Science and Technology

Volumn 23, Issue 3, 2008, Pages

  Czernohorsky, M ^a   Tetzlaff, D ^a   Bugiel, E ^a   Dargis, R ^a   Osten, H J ^a   Gottlob, H D B ^b   Schmidt, M ^b   Lemme, M C ^b   Kurz, H ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEGRADATION; GADOLINIUM COMPOUNDS; OXYGEN; RAPID THERMAL ANNEALING; THICKNESS MEASUREMENT;

CAPACITANCE EQUIVALENT THICKNESS; LAYER STACKS;

THIN FILMS;

EID: 42549172002     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/3/035010     Document Type: Article

References (10)

1. Osten H J, Czernohorsky M, Dargis R, Laha A, Kühne D, Bugiel E and Fissel A 2007 Microelectron. Eng. 84 2222
2. Green M L, Gusev E P, Degraeve R and Garfunkel E L 2001 J. Appl. Phys. 90 2057
3. Laha A, Fissel A and Osten H J 2007 Appl. Phys. Lett. 90 113508
4. Czernohorsky M, Fissel A, Bugiel E, Kirfel O and Osten H J 2006 Appl. Phys. Lett. 88 152905
5. Echtermeyer T, Gottlob H D B, Wahlbrink T, Mollenhauer T, Schmidt M, Efavi J K, Lemme M C and Kurz H 2007 Solid-State Electron. 51 617
6. Endres R, Stefanov Y and Schwalke U 2007 Microelectron. Reliab. 47 528
7. Osten H J, Bugiel E, Czernohorsky M, Elassar Z, Kirfel O and Fissel A 2007 Top. Appl. Phys. 106 101
8. Adachi G, Imanaka N and Kang Z C 2004 Binary Rare Earth Oxides (Dordrecht: Kluwer)
9. Lo Nigro R, Raineri V, Bondiorno C, Toro R, Malandrino G and Fragala I L 2003 Appl. Phys. Lett. 83 129
10. Gottlob H D B et al 2006 IEEE Electron Device Lett. 27 814