Leakage current mechanisms in epitaxial Gd2 O3 High-k gate dielectrics

Electrochemical and Solid-State Letters

Volumn 11, Issue 3, 2008, Pages

  Gottlob, H D B ^a   Echtermeyer, T J ^a   Schmidt, M ^a   Mollenhauer, T ^a   Wahlbrink, T ^a   Lemme, M C ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; EPITAXIAL LAYERS; GADOLINIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; SILICIDES;

BAND DIAGRAMS; EPITAXIAL GADOLINIUM OXIDE; HOLE CONDUCTION; LEAKAGE CURRENT MECHANISMS; SILICIDED NICKEL SILICIDE ELECTRODES; STANDBY POWER LOGIC APPLICATIONS;

GATE DIELECTRICS;

EID: 38349154981     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2828201     Document Type: Article

References (19)

1. J. Robertson, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/69/2/ R02, 69, 327 (2006).
2. International Technology Roadmap for Semiconductors, ITRS 2005 ed., available at http://public.itrs.net (2005).
3. O. Engström, B. Raeissi, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, and K. Cherkaoui, Solid-State Electron. SSELA5 0038-1101 10.1016/j.sse.2007.02.021, 51, 622 (2007).
4. T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, and H. Iwai, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2004.01.005, 72, 283 (2004).
5. A. Laha, E. Bugiel, and H. J. Osten, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2198518, 88, 172107 (2006).
6. J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1352688, 89, 3920 (2001).
7. H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, and H. Kurz, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.882581, 27, 814 (2006).
8. A. Fissel, D. Kühne, E. Bugiel, and H. J. Osten, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2214702, 24, 2115 (2006).
9. A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2713142, 90, 113508 (2006).
10. C. Cabral, Jr., J. Kedzierski, B. Linder, S. Zafar, V. Narayanan, S. Fang, A. Steegen, P. Kozlowski, R. Carruthers, and R. Jammy, Symposium on VLSI Technology, Digest of Technical Papers, p. 184 (2004).
11. J. H. Sim, H. C. Wen, J. P. Lu, and D. L. Kwong, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2004.833840, 25, 610 (2004).
12. H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. K. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, and A. Fissel, Solid-State Electron. SSELA5 0038-1101 10.1016/j.sse.2006.04.018, 50, 979 (2006).
13. Z. Xu, M. Houssa, S. De Gendt, and M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1435411, 80, 1975 (2002).
14. D. S. Jeong and C. S. Hwang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2135895, 98, 113701 (2005).
15. M. Czernohorsky, A. Fissel, E. Bugiel, O. Kirfel, and H. J. Osten, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2194227, 88, 152905 (2006).
16. M. C. Lemme, T. Mollenhauer, H. Gottlob, W. Henschel, J. Efavi, C. Welch, and H. Kurz, Microelectron. Eng. MIENEF 0167-9317, 73-74, 346 (2004).
17. S. M. Sze, Physics of Semiconductor Devices, p. 402, Wiley, New York (1981).
18. P. Li and T. M. Lu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.43. 14261, 43, 14261 (1991).
19. M. Houssa, High-K Gate Dielectrics, p. 597, Institute of Physics Publishing, London (2004).