Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 528-531

  Endres, Ralf ^a   Stefanov, Yordan ^a   Schwalke, Udo ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; GADOLINIUM COMPOUNDS; GATE DIELECTRICS; THICKNESS MEASUREMENT;

DAMASCENE METAL GATE TECHNOLOGY; EQUIVALENT OXIDE THICKNESS;

MOSFET DEVICES;

EID: 34247159074     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.018     Document Type: Article

References (10)

1. Stefanov Y, Singh R, DasGupta N, Misra P, Schwalke U. Conductive atomic force microscopy study of leakage currents through microscopic structural defects in high-K gate dielectrics, In: Proceedings of the electrochemical society conference on crystalline defects and contamination (ECS-DECON 2005), Grenoble, France, September 12-16; 2005.
2. Osten H.J., Liu J.P., Gaworzewski P., Bugiel E., and Zaumseil P. High-K gate dielectrics with ultra-low leakage current based on praseodymium oxide (2001), IEDM p. 653-56
3. Schwalke U, Stefanov Y, Komaragiri R, Ruland T. Electrical characterisation of crystalline praseodymium oxide high-K gate dielectric MOSFETs, In: Proceedings of the 33rd European solid state device research conference (ESSDERC); 2003. p. 247-50.
4. Samavedam S.B., et al. Fermi level pinning with sub-monolayer MeOx and metal gates (2003), IEDM p. 307
5. Hobbs C. Fermi level pinning at the poly-Si/metal-oxide interface, In: Symp of VLSI Tech: 2003. p. 9-10.
6. Chatterjee A., et al. Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process (1997), IEDM p. 821
7. Yagishi A., et al. High performance metal gate MOSFETs fabricated by CMP for 0.l μm regime (1998), IEDM p. 785
8. .
9. Schwalke U., and Stefanov Y. Process integration and nanometer-scale electrical characterization of crystalline high-K gate dielectrics. Microelectron Reliab 45 (2005) 790-793
10. 3 thin films on Si(0 0 1). Appl Phys Lett 88 (2006) 152905-1/3