Gentle FUSI NiSi metal gate process for high-k dielectric screening

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2019-2021

  Gottlob, H D B ^a   Lemme, M C ^a   Schmidt, M ^a   Echtermeyer, T J ^a   Mollenhauer, T ^a   Kurz, H ^a   Cherkaoui, K ^b   Hurley, P K ^b   Newcomb, S B ^c  

^a AMO GMBH   (Germany)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c Glebe Scientific Ltd   (Ireland)

Author keywords

FUSI NiSi; High k; Material screening; Ultrathin dielectric

Indexed keywords

CHARGE COUPLED DEVICES; DIELECTRIC MATERIALS; ELECTRODES; GADOLINIUM; LANTHANUM; LANTHANUM ALLOYS; MATERIALS HANDLING; METALLIC COMPOUNDS; METALLIZING; METALS; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; MOS DEVICES; NICKEL; NICKEL ALLOYS; NICKEL OXIDE; NONMETALS; RARE EARTH ELEMENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICATES; SILICON;

FUSI NISI; GADOLINIUM OXIDE; HIGH-K; HIGH-K DIELECTRICS; HYGROSCOPIC MATERIALS; INTRINSIC MATERIAL PROPERTIES; LANTHANUM SILICATES; LOW-THERMAL-BUDGET; MATERIAL SCREENING; METAL GATES; METAL-GATE ELECTRODES; METAL-OXIDE- SEMICONDUCTORCAPACITORS; NICKEL MONOSILICIDE; NICKEL SILICIDE; OXIDE THICKNESSES; PROCESS FLOWS; RARE-EARTH OXIDES; ULTRATHIN DIELECTRIC;

OXIDE FILMS;

EID: 52149109949     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.03.016     Document Type: Article

References (15)

1. International Technology Roadmap for Semiconductors, 2007 Edition. Available from:
2. Mistry K., et al. IEEE IEDM Tech. Dig. (2007) 247-250
3. Engström O., Raeissi B., Hall S., Buiu O., Lemme M.C., Gottlob H.D.B., Hurley P.K., and Cherkaoui K. Solid-State Electron. 51 4 (2007) 622-626
4. Wong H., and Iwai H. Microelectron. Eng. 83 10 (2006) 1867-1904
5. Gottlob H.D.B., Echtermeyer T., Schmidt M., Mollenhauer T., Efavi J.K., Wahlbrink T., Lemme M.C., Czernohorsky M., Bugiel E., Fissel A., Osten H.J., and Kurz H. IEEE Electron Device Lett. 27 10 (2006) 814-816
6. Hurley P.K., Cherkaoui K., O'Connor E., Lemme M.C., Gottlob H.D.B., Schmidt M., Hall S., Lu Y., Buiu O., Raeissi B., Piscator J., Engström O., and Newcomb S.B. J. Electrochem. Soc. 155 2 (2008) G13-G20
7. Jeon S., and Hwang H. J. Appl. Phys. 93 10 (2003) 6393-6395
8. Czernohorsky M., Fissel A., Bugiel E., Kirfel O., and Osten H.J. Appl. Phys. Lett. 88 15 (2006) 152905
9. Kittl J.A., Veloso A., Lauwers A., Anil K.G., Demeurisse C., Kubicek S., Niwa M., van Dal M.J.H., Richard O., Pawlak M.A., Jurczak M., Vrancken C., Chiarella T., Brus S., Maex K., and Biesemans S. VLSI Symp. Tech. Dig. (2005) 72-73
10. Lemme M.C., Mollenhauer T., Gottlob H., Henschel W., Efavi J., Welch C., and Kurz H. Microelectron. Eng. 73/74 (2004) 346-350
11. Giannuzzi L.A., and Stevie F.A. Micron 30 3 (1999) 197-204
12. Lime F., Guiducci C., Clerc R., Ghibaudo G., Leroux C., and Ernst T. Solid-State Electron. 47 7 (2003) 1147-1153
13. Garros X., Leroux C., and Autran J.-L. Electrochem. Solid-State Lett. 5 3 (2002) F4-F6
14. Hurley P.K., Pijolat M., Cherkaoui K., O'Connor E., O'Connell D., Negara M.A., Lemme M.C., Gottlob H.D.B., Schmidt M., Stegmaier K., Schwalke U., Hall S., Buiu O., Engstrom O., and Newcomb S.B. ECS Trans. 11 4 (2007) 145-156
15. Tsai W., Ragnarsson L., Pantisano L., Chen P.J., Onsia B., Schram T., Cartier E., Kerber A., Young E., Caymax M., De Gendt S., and Heyns M. IEEE IEDM Tech. Dig. (2003) 311-314