Stability of Advanced Gate Stack Devices

Journal of the Electrochemical Society

Volumn 151, Issue 2, 2004, Pages

  Kim, I ^a   Han, S K ^a   Osburn, C M ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC FIELD EFFECTS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; POLYSILICON; STRESS ANALYSIS; TRANSCONDUCTANCE; ZIRCONIUM COMPOUNDS;

GATE STACK DEVICES; STRESSING;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 1242264923     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1636180     Document Type: Article

References (12)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (2001).
2. B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y Jeon, W. Qi, C. Kang, and J. Lee, Tech. Dig. - Int. Electron Devices Meet., 2000, 39.
3. C. Hobbs, H. Tseng, K. Reid, L. Dip, L. Hebert, R. Garcia, R. Hedge, J. Grant, D. Gilmer, A. Frankie, V. Dhandapani, M. Azrak, L. Praphu, R. Rai, S. Bagchi, J. Conner, S. Becker, F. Dumbya, B. Nguyen, and P. Tobin, Tech. Dig. - Int. Electron Devices Meet., 2001, 651.
4. C. H. Lee, H. F. Luan, S. J. Lee, T. S. Jeon, W. P. Bai, Y. Sensaki, D. Roberts, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet., 2000, 219.
5. A. Chin, Y. H. Wu, S. B. Chen, C. C. Lao, and W. J. Chen, in Technical Digest for 2000 Symposium on VLSI Technology, IEEE, p. 16 (2000).
6. B. H. Lee, L. Kang, W. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. Lee, Tech. Dig. - Int. Electron Devices Meet., 1999, 133.
7. I. Kim, S. K. Han, W. Kiether, S. J. Lee, C. H. Lee, H. F. Luan, Z. Luo, E. Rying, Z. Wang, D. Wicaksana, W. Zhu, J. Hauser, A. Kingon, D. L. Kwong, T. P. Ma, J. P. Maria, V. Misra, and C. M. Osburn, in Rapid Thermal and Other Short-Time Processing Technologies II, D. L. Kwong, K. G. Reid, M. C. Ozturk, P. J. Timans, and F. Roozeboom, Editors, PV 2001-9, p. 211, the Electrochemical Society Proceedings Series, Pennington, NJ (2001).
8. I. Kim, S. K. Han, and C. M. Osburn, Abstract 718, The Electrochemical Society Meeting Abstracts, Vol. 2002-1, Philadelphia, PA, May 12-17, 2002.
9. J. R. Hauser, IEEE Trans. Electron Devices, 43, 1981 (1996).
10. T. H. Ning, J. Appl. Phys., 46, 3203 (1976).
11. K. Onishi, C. S. Kang, R. Choi, H. Cho, and J. Lee, Tech. Dig. - Int. Electron Devices Meet., 2001, 659.
12. W.-K. Shih, UTQUANT 2.0 User's Guide, University of Texas Press, Austin, TX (1997).