Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 232-243

  Strzhemechny, Y M ^a   Bataiev, M ^b   Tumakha, S P ^c   Goss, S H ^c   Hinkle, C L ^d   Fulton, C C ^d   Lucovsky, G ^d   Brillson, L J ^c  

^a TEXAS CHRISTIAN UNIVERSITY   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c The Ohio State University   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; CHEMICAL COMPOSITION; LOW ENERGY ELECTRON-EXCITED NANOSCALE (LEEN); LUMINESCENCE SPECTROSCOPY;

CRYSTAL DEFECTS; HAFNIUM COMPOUNDS; HETEROJUNCTIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS;

LUMINESCENCE;

EID: 38849117215     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2830692     Document Type: Article

References (26)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
2. M. Houssa and M. Hyens, in High- κ Gate Dielectrics, edited by, M. Houssa, (Institute of Physics, Bristol, 2004), pp. 3-14.
3. G. Lucovsky, in Physics and Chemistry of Si O2 and the Si-Si O2 Interface, edited by, H. Z. Massoud, J. H. Stathis, T. Hattori, D. Misra, and, I. po Baumvol, (The Electrochemical Society, Pennigton, 2005), pp. 3-28, and references therein.
4. G. Lucovsky, H. Seo, S. Lee, L. B. Fleming, M. D. Ulrich, J. Lüning, P. Lysaght, and G. Bersuker, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.46.1899 46, 1899 (2007).
5. X. L. Sun, L. J. Brillson, Y.-M. Chiang, and J. Luo, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1512688 92, 5072 (2002); X. L. Sun, S. H. Goss, L. J. Brillson, D. C. Look, and R. J. Molnar, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1454187 91, 6729 (2002).
6. G. Lucovsky, C. C. Fulton, Y. Zhang, Y. Zou, J. Lüning, L. F. Edge, J. L. Whitten, R. J. Nemanich, H. Ade, D. G. Schlom, V. V. Afanase'v, A. Stesmans, S. Zollner, D. Triyoso, and B. R. Rogers, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 10.1109/TDMR.2005.845804 5, 65 (2005).
7. G. B. Rayner, Jr., D. Kang, Y. Zhang, and G. Lucovsky, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1493788 20, 1748 (2002).
8. L. J. Brillson, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1394728 19, 1762 (2001).
9. P. Hovington, D. Drouin, and R. Gauvin, Scanning SCNNDF 0161-0457 19, 1 (1997).
10. J. Schäfer, A. P. Young, L. J. Brillson, H. Niimi, and G. Lucovsky, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122003 73, 791 (1998).
11. J.-L. Autran, D. Munteanu, and M. Houssa, in High- κ Gate Dielectrics, edited by, M. Houssa, (Institute of Physics, Bristol, 2004), pp. 251-290.
12. H. R. Philipp and H. Ehrenreich, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.129.1550 129, 1550 (1963).
13. K. Xiong, J. Robertson, M. C. Gibson, and S. J. Clark, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2119425 87, 183505 (2005), and references therein.
14. A. S. Foster, V. B. Sulimov, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.224108 64, 224108 (2001); A. S. Foster, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.174117 65, 174117 (2002).
15. J. L. Gavartin, D. Munoz Ramo, A. L. Shluger, G. Bersuker, and B. H. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2236466 89, 082908 (2006).
16. G. Bersuker, J. H. Sim, C. S. Park, C. D. Young, S. V. Nadkarni, R. Choi, and B. H. Lee, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 10.1109/TDMR.2007.897532 7, 138 (2007).
17. H. Takeuchi, H. Daewon, and T.-J. King, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1705593 22, 1337 (2004).
18. J. Aarik, H. Mändar, M. Kirm, and L. Pung, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.01.110 466, 41 (2004).
19. G. Lucovsky, J. Mol. Struct. JMOSB4 0022-2860 10.1016/j.molstruc.2007.01. 010 838, 187 (2007).
20. H. B. Gray, Electrons and Chemical Bonding (Benjamin, New York, 1965).
21. F. A. Cotton, Chemical Applications of Group Theory, 2nd ed. (Wiley Interscience, New York, 1963).
22. P. A. Cox, Transition Metal Oxides (Clarendon, Oxford, 1992).
23. S. Wright, S. Feeney, and R. C. Barklie, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2007.04.007 84, 2378 (2007).
24. R. M. White and T. H. Geballe, Long Range Order in Solids (Academic, New York, 1979), pp. 133-143.
25. N. Greaves, in The Physics of Si O2 and its Interfaces, edited by, S. T. Pantelides, (Pergamon, New York, 1978), pp. 268-272.
26. S. Walsh, L. Fang, E. Weisbod, and L. J. Brillson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2435585 90, 052901 (2007).