Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Seike, A ^a   Tange, T ^a   Sano, I ^a   Sugiura, Y ^a   Kosemura, D ^b   Ogura, A ^b   Ohdomari, I ^a  

^a WASEDA UNIVERSITY   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRES; OXIDATION; RAMAN SCATTERING; TENSILE STRESS; TRANSCONDUCTANCE; VISCOELASTICITY;

BUILD-UP TENSILE STRESS; THERMAL OXIDATION; VISCOELASTIC RELAXATION;

FIELD EFFECT TRANSISTORS;

EID: 34547850722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2768637     Document Type: Article

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