Energy level offset at organic semiconductor heterojunctions

Journal of Applied Physics

Volumn 83, Issue 5, 1998, Pages 2649-2655

  Rajagopal, A ^a   Wu, C I ^a   Kahn, A ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; INTERFACES (MATERIALS); LIGHT EMITTING DIODES;

ENERGY LEVEL OFFSET; HOLE TRANSPORT; MOLECULAR ORBITALS; ORGANIC FILMS;

HETEROJUNCTIONS;

EID: 0032023220     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367027     Document Type: Article

References (23)

1. For review, see N. C. Greenham and R. H. Friend, Solid State Physics Series, edited by H. Ehrenreich and F. Saepen (Academic, New York, (1995), Vol. 48, p. 1;
2. S. R. Forrest, Chem. Rev. 97, 1793 (1997).
3. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
4. C. W. Tang, S. A. VanSlyke, and C. H. Chen, J. Appl. Phys. 65, 3610 (1989).
5. Z. Shen, P. E. Burrows, V. Bulovic, S. R. Forrest, and M. E. Thompson, Science 276, 2009 (1997).
6. P. H. Rieger, Electrochemistry (Chapman & Hall, New York, 1994).
7. For review, see M. Lannoo and P. Friedel, Atomic and Electronic Structure of Surfaces (Springer-Verlag, Berlin, 1991);
8. W. Mönch, Semiconductor Surfaces and Interfaces (Springer-Verlag, Berlin, 1993).
9. Y. Hirose, A. Kahn, V. Aristov, and P. Soukiassian, Appl. Phys. Lett. 68, 217 (1996).
10. Y. Hirose, A. Kahn, V. Aritov, P. Soukiassian, V. Bulovic, and S. R. Forrest, Phys. Rev. B 54, 13 748 (1996).
11. S. Narioka, H. Ishii, D. Yoshimura, M. Sei, Y. Ouchi, K. Seki, S. Hasegawa, T. Miyazaki, Y. Harima, and K. Yamashita, Appl. Phys. Lett. 67, 1899 (1995).
12. W. R. Salaneck and J. L. Brédas, Adv. Mater. 8, 48 (1996).
13. Y. Park, V. Choong, E. Ettedgui, Y. Gao, B. R. Hsieh, T. Wehrmeister, and K. Müllen, Appl. Phys. Lett. 69, 1080 (1996).
14. A. Rajagopal and A. Kahn, Adv. Mater. (accepted for publication).
15. N. Sato and M. Yoshikawa, J. Electron Spectrosc. Relat. Phenom. 78, 387 (1996).
16. Y. Hirose, W. Chen, E. I. Haskal, S. R. Forrest, and A. Kahn, J. Vac. Sci. Technol. B 12, 2616 (1994).
17. N. Karl and N. Sato, Mol. Cryst. Liq. Cryst. 218, 79 (1992).
18. A. Schmidt, M. L. Anderson, and N. R. Armstrong, J. Appl. Phys. 78, 5619 (1995).
19. A. Rajagopal, Y. Hu, and A. Kahn (unpublished).
20. H. Ishii and K. Seki, IEEE Trans. Electron Devices 44, 1295 (1997).
21. C. I. Wu, Y. Hirose, H. Sirringhaus, and A. Kahn, Chem. Phys. Lett. 272, 43 (1997).
22. P. E. Burrows and S. R. Forrest, Appl. Phys. Lett. 64, 2285 (1994).
23. V. Bulovic, P. Tian, P. E. Burrows, M. R. Gokhale, S. R. Forrest, and M. E. Thompson, Appl. Phys. Lett. 70, 2954 (1997).