Amorphous inclusions in irradiated silicon and their effects on material and device properties

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 2992-2999

  Palko, J W ^a   Srour, J R ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

Defect clusters; Displacement damage; Molecular dynamics; Radiation effects; Silicon

Indexed keywords

DYNAMICS; ELECTRONIC PROPERTIES; ENERGY DISSIPATION; MOLECULAR DYNAMICS; NONMETALS; RADIATION; RADIATION EFFECTS;

AMORPHOUS REGIONS; BULK MATERIALS; DEFECT CLUSTERS; DEVICE PROPERTIES; DISPLACEMENT DAMAGE; HIGH RATES; NON-IONIZING ENERGY LOSS; SILICON;

AMORPHOUS SILICON;

EID: 58849159642     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2006751     Document Type: Conference Paper

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