A new model for generation-recombination in silicon depletion regions after neutron irradiation

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2587-2594

  Watts, S J ^a   Matheson, J ^a   Hopkins Bond, I H ^b   Holmes Siedle, A ^b   Mohammadzadeh, A ^b   Pace, R ^b  

^a BRUNEL UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SOUTH AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE COUPLED DEVICES; CHARGE TRANSFER; DEEP LEVEL TRANSIENT SPECTROSCOPY; LEAKAGE CURRENTS; NEUTRON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING SILICON;

HIGH RESISTIVITY SILICON DIODES;

SEMICONDUCTOR DIODES;

EID: 0030372719     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556840     Document Type: Article

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