-
1
-
-
22944467543
-
Influence of substrate temperature on the deposition of μc-Si: H thin film fabricated with VHF-PECVD and its structural properties [J]
-
YANG Hui-dong. Influence of substrate temperature on the deposition of μc-Si: H thin film fabricated with VHF-PECVD and its structural properties [J] . Journal of Optoelectronics Laser, 16 (6), 646-649 (2005).
-
(2005)
Journal of Optoelectronics Laser
, vol.16
, Issue.6
, pp. 646-649
-
-
Hui-dong, Y.A.N.G.1
-
2
-
-
3242658029
-
Study on the propertie s of silicon based films with high growth rate fabricated by VHF-PECVD at low temperature [J]
-
ZHANG Xiao-dan, ZHAO Ying, ZHU Feng, et al. Study on the propertie s of silicon based films with high growth rate fabricated by VHF-PECVD at low temperature [J] . Journal of Optoelectronics La ser, 15(5), 507-511 (2004).
-
(2004)
Journal of Optoelectronics La ser
, vol.15
, Issue.5
, pp. 507-511
-
-
ZHANG, X.-D.1
ZHAO, Y.2
Feng, Z.H.U.3
-
3
-
-
29244464770
-
Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering [J]
-
Maruf Hossain,Husam H. Abu-Safe, Hameed Naseem et al. Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering [J].Non-Crystalline Solids, 352, 18-23(2006).
-
(2006)
Non-Crystalline Solids
, vol.352
, pp. 18-23
-
-
Hossain, M.1
Abu-Safe, H.H.2
Naseem, H.3
-
4
-
-
40749130686
-
-
Qian Xiangzhong. Study of Absorption Coefficient of Hydrogenated Amorphous Silicon [J].Vacuum electron technology, 2, 20-22 (2004).
-
Qian Xiangzhong. Study of Absorption Coefficient of Hydrogenated Amorphous Silicon [J].Vacuum electron technology, 2, 20-22 (2004).
-
-
-
-
6
-
-
0020295760
-
Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon [J]
-
J.B. Webb, Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon [J] J. Appl. Phys. 53, 9043-9048(1982).
-
(1982)
J. Appl. Phys
, vol.53
, pp. 9043-9048
-
-
Webb, J.B.1
-
7
-
-
0021444902
-
Deposition parameters and film properties of hydrogenated amorphous silicon prepared by high rate dc planar magnetron reactive sputtering [J]
-
N. Sawides, Deposition parameters and film properties of hydrogenated amorphous silicon prepared by high rate dc planar magnetron reactive sputtering [J]. J. Appl. Phys. 55, 4232-4238(1984).
-
(1984)
J. Appl. Phys
, vol.55
, pp. 4232-4238
-
-
Sawides, N.1
-
8
-
-
0017959228
-
The hydrogen content of plasma-deposited silicon nitride [J]
-
W.A. Lanford, M.J. Rand, The hydrogen content of plasma-deposited silicon nitride [J]. J. Appl. Phys. 49 (4), 2473-2477 (1978).
-
(1978)
J. Appl. Phys
, vol.49
, Issue.4
, pp. 2473-2477
-
-
Lanford, W.A.1
Rand, M.J.2
-
9
-
-
0001108725
-
Si-H bonding in low hydrogen content amorphous silicon films as probed by infrared spectroscopy and x-ray diffraction[J]
-
A.H. Mahan, L.M. Gedvilas, J.D. Webb, Si-H bonding in low hydrogen content amorphous silicon films as probed by infrared spectroscopy and x-ray diffraction[J]. J. Appl. Phys. 87 (4), 1650-1658 (2000).
-
(2000)
J. Appl. Phys
, vol.87
, Issue.4
, pp. 1650-1658
-
-
Mahan, A.H.1
Gedvilas, L.M.2
Webb, J.D.3
-
10
-
-
0021603833
-
Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gas [J]Appl
-
N. Saito, H. Sannomiya, T. Yamaguchi, N. Tanaka, Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gas [J]Appl. Phys. A 35, 241-247 (1984).
-
(1984)
Phys. A
, vol.35
, pp. 241-247
-
-
Saito, N.1
Sannomiya, H.2
Yamaguchi, T.3
Tanaka, N.4
-
11
-
-
0019599319
-
Microstructure and properties of rf-sputtered amorphous hydrogenated silicon films [J]
-
R.C. Ross, R. Messier, Microstructure and properties of rf-sputtered amorphous hydrogenated silicon films [J]J. Appl. Phys. 52, 5329-5339 (1981).
-
(1981)
J. Appl. Phys
, vol.52
, pp. 5329-5339
-
-
Ross, R.C.1
Messier, R.2
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