Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 202, Issue , 2003, Pages 114-119

  Otto, G ^a   Hobler, G ^a   Gartner K ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Ion implantation; Molecular dynamics; Radiation damage; Silicon

Indexed keywords

COMPUTER SIMULATION; DEFECTS; ION IMPLANTATION; KINETIC THEORY; MOLECULAR DYNAMICS; MONTE CARLO METHODS; PROBABILITY; SILICON;

DAMAGE FORMATION;

RADIATION DAMAGE;

EID: 0037378284     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01843-8     Document Type: Conference Paper

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