The structure of 1.5-2.0 eV band gap amorphous silicon films prepared by chemical annealing

Journal of Non-Crystalline Solids

Volumn 266-269 A, Issue , 2000, Pages 630-634

  Futako, Wataru ^a   Kamiya, Toshio ^a   Fortmann, Charles M ^a   Shimizu, Isamu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000117694     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00756-5     Document Type: Article

References (10)

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