Calculations of radiation dose-rate sensitivity of bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3009-3015

  Hjalmarson, Harold P ^a   Pease, Ronald L ^b   Devine, Roderick A B ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b RLP Research   (United States)

^c NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

Author keywords

Bimolecular reaction; Bipolar junction transistor; Cracking; Dimerization; Dose rate; ELDRS; Excess base current; Hole; Hydrogen; Interface trap; Kinetics; Proton; Radiation; Recombination; Silicon dioxide

Indexed keywords

BIPOLAR TRANSISTORS; DIMERIZATION; FLOW MEASUREMENT; HYDROGEN; IONIZING RADIATION; PROTONS; RADIATION EFFECTS; REACTION KINETICS; SILICA; TUNNEL DIODES;

BIMOLECULAR REACTION; BIPOLAR JUNCTION TRANSISTOR; CRACKING; DOSE RATE; ELDRS; EXCESS BASE CURRENT; HOLE; INTERFACE TRAP; KINETICS; PROTON; RADIATION; RECOMBINATION; SILICON DIOXIDE;

TRANSISTORS;

EID: 58849149915     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007487     Document Type: Conference Paper

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