Dose-rate dependence of radiation-induced interface trap density in silicon bipolar transistors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 250, Issue 1-2 SPEC. ISS., 2006, Pages 269-273

  Hjalmarson, H P ^a   Pease, R L ^b   Hembree, C E ^a   Van Ginhoven, R M ^a   Schultz, P A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b RLP Research   (United States)

Author keywords

ELDRS; Fixed charge; Hydrogen; Interface traps; Ionizing radiation; Silicon dioxide

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRONS; HYDROGEN; INTERFACES (MATERIALS); IONIZING RADIATION; SATURATION (MATERIALS COMPOSITION); SILICA;

ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS); FIXED CHARGE; INTERFACE TRAP DENSITY; INTERFACE TRAPS;

DOSIMETRY;

EID: 33746281092     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.122     Document Type: Article

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