Radiation-induced base current broadening mechanisms in gated bipolar devices

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3178-3185

  Chen, X J ^a   Barnaby, H J ^a   Pease, Ronald L ^b   Schrimpf, R D ^c   Platteter, Dale G ^d   Dunham, G ^d  

^a UNIVERSITY OF ARIZONA   (United States)

^b RLP Research   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

Bipolar; Energy distribution; Gated devices; Interface traps; Ionization; Radiation

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; DATA ACQUISITION; ELECTROSTATICS; INFORMATION ANALYSIS; IONIZATION; RADIATION; THRESHOLD ELEMENTS;

BASE CURRENT PEAK; ENERGY DISTRIBUTION; GATED DEVICES; INTERFACE TRAPS;

ELECTRIC CURRENTS;

EID: 11044231382     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839198     Document Type: Conference Paper

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