Analysis of the transient response of high performance 50-nm partially depleted SOI transistors using a laser probing technique

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 1825-1833

  Ferlet Cavrois, V ^a,b   Paillet, P ^a,b   McMorrow, D ^c   Melinger, J S ^c   Campbell, A B ^c   Gaillardin, M ^d   Faynot, O ^e   Thomas, O ^e   Barna, G ^e   Giffard, B ^e  

^a IEEE   (France)

^b CEA DIF   (France)

^c NAVAL RESEARCH LABORATORY   (United States)

^d IMEP LAHC   (France)

^e CEA LETI   (France)

Author keywords

Bipolar amplification gain; Charge calibration; Critical charge; Partially depleted SOI; Pulsed laser irradiation; Threshold LET

Indexed keywords

BIPOLAR AMPLIFICATION GAIN; CHARGE CALIBRATION; CRITICAL CHARGE; PARTIALLY DEPLETED SOI; PULSED LASER IRRADIATION; THRESHOLD LET;

ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; IRRADIATION; LASER APPLICATIONS; LASER PULSES; LEAKAGE CURRENTS; OPTIMIZATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33748354469     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.880572     Document Type: Conference Paper

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