Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2104-2113

  Ferlet Cavrois, V ^a,b   Paillet, P ^a,b   McMorrow, D ^a,d   Torres, A ^a,b   Gaillardin, M ^c   Melinger, J S ^d   Knudson, A R ^d   Campbell, A B ^a,d   Schwank, J R ^a,e   Vizkelethy, G ^e   Shaneyfelt, M R ^a,e   Hirose, K ^f   Faynot, O ^g   Jahan, C ^g   Tosti, L ^g  

^a IEEE   (France)

^b CEA DIF   (France)

^c IMEP LAHC   (France)

^d NAVAL RESEARCH LABORATORY   (United States)

^e SANDIA NATIONAL LABORATORIES   (United States)

^f JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^g CEA LETI   (France)

Author keywords

Collected charge; Heavy ion; Pulsed laser; SOI and bulk transistors; Transient current

Indexed keywords

COLLECTED CHARGE; PULSED LASER; SOI AND BULK TRANSISTORS; TRANSIENT CURRENT;

AMPLIFICATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; HEAVY IONS; IRRADIATION; NANOSTRUCTURED MATERIALS;

LASER PULSES;

EID: 33144475973     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860682     Document Type: Conference Paper

References (25)

1. G. E. Moore, "Cramming more components onto integrated circuits," Electronics, vol. 38, no. 8, p. 114, Apr. 19, 1965. [Online]. Available: http://www.intel.com/research/silicon/mooreslaw.htm.
2. International Technology Roadmap for Semiconductors 2002. [Online]. Available: http://public.itrs.net
3. J. P. Colinge, "Silicon-on-insulator technology: Overview and device physics," in Proc. IEEE NSREC Short Course, Vancouver, BC, Canada, July 2001, pp. II 1-70.
4. S. Cristoloveanu, T. Ernst, D. Munteanu, and T. Ouisse, "Int. J. of high speed electronics and systems," in Frontiers in Electronics: From Materials to Systems, Y. S. Park, S. Luryi, M. S. Shur, J. M. Xu, and A. Zaslavsky, Eds. Singapore: World Scientific, 2000, vol. 10, p. 217.
5. S. Cristoloveanu, F. Allibert, and A. Zaslavsky, "Double-gate MOSFETs: Performance and technology options," in Int. Semiconductor Device Research Symp., Dec., 5-7 2001, pp. 459-460.
6. B. Yu, H. Wang, A. Joshi, Q. Xiang, and M. R. Lin, "15-nm gate length planai- CMOS transistor," IEDM Tech. Dig., pp. 937-939, 2001.
7. A. Taber and E. Normand, "Single event upset in avionics," IEEE Trans. Nucl. Sci., vol. 40, no. 2, pp. 120-126, Apr. 1993.
8. E. Normand, "Single-event effects in avionics," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 461-474, Apr. 1996.
9. P. S. Winokur, G. K. Lum, M. R. Shaneyfelt, F. W. Sexton, G. L. Hash, andL. Scott, "Use of COTS microelectronics in radiation environments, " IEEE Trans. Nucl. Scie., vol. 46, no. 6, p. 1494, Dec. 1999.
10. R. C. Lacoe, "CMOS scaling and process history, design principles, and hardening by design methodologies," in Proc. IEEE NSREC Short Course, Monterey, CA, Jul. 2003, pp. 6-34.
11. S. T. Buchner and M. P. Baze, "Single event transients in fast electronic circuits," in Proc. IEEE NSREC Short Course, Vancouver, BC, Canada, Jul. 2001, pp. V 1-105.
12. D. G. Mavis and P. H. Eaton, "Soft error rate mitigation techniques for modern microcircuits," in Proc. Reliability Physics Symp., Apr. 2002, pp. 216-225.
13. J. Benedetto, P. Eaton, K. Avery, D. Mavis, M. Gadlage, T. Turflinger, P. E. Dodd, and G. Vizkelethy, "Heavy ion-induced digital single-event transients in deep submicron processes," IEEE Trans. Nucl. Sci., vol. 51, no. 6, p. 3480, Dec. 2004.
14. O. Musseau, V. Ferlet-Cavrois, J. L. Pelloie, S. Buchner, D. McMorrow, and A. B. Campbell, "Laser probing of bipolar amplification in 0.25-μm MOS/SOI transistors," IEEE Trans. Nucl. Sci., vol. 47, no. 6, p. 2196, Dec. 2000.
15. V. Ferlet-Cavrois, G. Vizkelethy, P. Paillet, A. Torres, J. R. Schwank, M. R. Shaneyfelt, J. Baggio, J. du Port de Pontcharra, and L. Tosti, "Charge enhancement effect in NMOS bulk transistors induced by heavy ion irradiation - Comparaison with SOI," IEEE Trans. Nucl. Sci., vol. 51, no. 6, p. 3255, Dec. 2004.
16. J. S. Melinger, D. McMorrow, A. B. Campbell, S. Buchner, L. H. Tran, A. R. Knudson, and W. R. Curtice, "Pulsed laser induced single event upset and charge collection measurements as a function of optical penetration depth," J. Appl. Phys., vol. 84, no. 2, p. 690, 1998.
17. J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weatherford, A. B. Campbell, and H. Eisen, "Critical evaluation of pulsed laser method for single-event effects testing and fundamental studies," IEEE Trans. Nucl. Sci., vol. 41, no. 6, p. 2574, Dec. 1994.
18. D.McMorrow, J.S. Melinger, S. Buchner, T. Scott, R. D. Brown, and N. F. Haddad, "Application of a pulsed laser for evaluation and optimization of SEU-Hard designs," IEEE Trans. Nucl. Sci., vol. 47, no. 3, p. 559, Jun. 2000.
19. J. F. Ziegler, The Stopping and Range of Ions in Matter. New York: Pergamon, 1977, vol. 4.
20. H. Schone, D. S. Walsh, F. W. Sexton, B. L. Doyle, P. E. Dodd, J. F. Aurand, R. S. Flores, and N. Wing, "Time-resolved ion beam indued charge collection (TRIBICC) in micro-electronics," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2544-2549, Dec. 1998.
21. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, p. 3278, Dec. 2004.
22. V. Ferlet-Cavrois, P. Paillet, D. McMorrow, J. S. Melinger, O. Faynot, and B. Giffard, "Analysis of the transient response of 50 nm partially depleted SOI transistors using a laser probing technique," presented at the 8th Eur. Conf. Radiation and Its Effects on Components and Systems (RADECS), Cap d'Agde, France, Sep. 19-23, 2005.
23. ISE (Integrated Systems Eng.) TCAD Manuals, Release 10, 2004.
24. P. Eaton, J. Benedetto, D. Mavis, K. Avery, M. Sibley, M. Gadlage, and T. Turflinger, "Single event transient pulse width measurements using a temporal latch technique," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3365-3368, Dec. 2004.
25. M. J. Gadlage, R. D. Schrimpf, P. H. Eaton, and T. L. Turflinger, "Single-event transient pulse widths in digital microcircuits," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3285-3290, Dec. 2004.