Effect of floating-body charge on SOI MOSFET design

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 430-438

  Wei, Andy ^a   Sherony, Melanie J ^a   Antoniadis, Dimitri A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Cmosfet's silicon on insulator

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; SILICON ON INSULATOR TECHNOLOGY;

FLOATING BODY CHARGES;

MOSFET DEVICES;

EID: 0031999299     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658677     Document Type: Article

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