Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2495-2499

  Gadlage, Matthew J ^a   Schrimpf, Ronald D ^a   Narasimham, Balaji ^a   Bhuva, Bharat L ^a   Eaton, Paul H ^b   Benedetto, Joseph M ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b Microelectronics Research and Development Corporation   (United States)

^c Microelectronics Research and Development Corporation   (United States)

Author keywords

Heavy ion; Ion radiation effects; Single event upset (SEU)

Indexed keywords

HEAVY IONS; INTEGRATED CIRCUITS; ION BOMBARDMENT; RADIATION EFFECTS; TRANSIENT ANALYSIS; VOLTAGE CONTROL;

HEAVY ION; ION RADIATION EFFECTS; SINGLE EVENT UPSET (SEU); SPACE-BASED SYSTEMS;

DIGITAL CIRCUITS;

EID: 37249075972     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.907433     Document Type: Conference Paper

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