The stability of faceted SiGe quantum dots capped with a thin Si layer

Nanotechnology

Volumn 18, Issue 2, 2007, Pages

  Wu, Y Q ^a,b   Zou, J ^b   Li, F H ^a   Cui, J ^a   Lin, J H ^a   Wu, R ^a   Jiang, Z M ^a  

^a FUDAN UNIVERSITY   (China)

^b UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; FREE ENERGY; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

DESICCATORS; SURFACE FREE ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846781647     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/2/025404     Document Type: Article

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