Coulomb charging effect of holes in Ge quantum dots studied by deep level transient spectroscopy

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 65-68

  Zhang, Sheng kun ^a   Lu, Fang ^a   Jiang, Zui min ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; SEMICONDUCTING GERMANIUM;

COULOMB CHARGING EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034228192     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00836-1     Document Type: Article

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