A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growth

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 493-499

  Gokhale, Amit A ^a,b   Kuech, Thomas F ^a   Mavrikakis, Manos ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b BP AMERICA INC   (United States)

Author keywords

A1. Diffusion; A1. Kinetics; A1. Preferential sidewall facets; A1. Thermodynamics; A3. LEO; B1. Antimony; B1. BiN; B1. Bismuth; B1. GaN (1 1 over(2, ) 0); B1. GaN(0 0 0 1); B1. SbN

Indexed keywords

ADSORPTION; CRYSTAL GROWTH; DIFFUSION BARRIERS; REACTION KINETICS; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

PREFERENTIAL SIDEWALL FACETS; SURFACTANT EFFECT;

GALLIUM NITRIDE;

EID: 34247390709     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.01.012     Document Type: Article

References (51)

1. Ponce F.A., and Bour D.P. Nature 386 (1997) 351
2. Jain S.C., Willander M., Narayan J., and Van Overstraeten R. J. Appl. Phys. 87 (2000) 965
3. Held R., Crawford D.E., Johnston A.M., Dabiran A.M., and Cohen P.I. Surf. Rev. Lett. 5 (1998) 913
4. Ploog K.H., Brandt O., Yang H., Yang B., and Trampert A. J. Vac. Sci. Technol. B 16 (1998) 2229
5. Markov I. Mater. Chem. Phys. 49 (1997) 93
6. Markov I. Surf. Sci. 429 (1999) 102
7. Zhang L., Tang H.F., and Kuech T.F. Appl. Phys. Lett. 79 (2001) 3059
8. L. Zhang, Influence of impurities as surfactants on the growth of gallium nitride thin film by metal organic vapor phase epitaxy, Ph.D. Thesis, University of Wisconsin-Madison, 2002.
9. Zhang L., Tang H.F., Schieke J., Mavrikakis M., and Kuech T.F. J. Crystal Growth 242 (2002) 302
10. Kandel D., and Kaxiras E. Phys. Rev. Lett. 75 (1995) 2742
11. Kaxiras E. Mater. Sci. Eng. B B30 (1995) 175
12. Jun S.W., Fetzer C.M., Lee R.T., Shurtleff J.K., and Stringfellow G.B. Appl. Phys. Lett. 76 (2000) 2716
13. Northrup J.E., and Neugebauer J. Phys. Rev. B 60 (1999) R8473
14. Northrup J.E., Romano L.T., and Neugebauer J. Appl. Phys. Lett. 74 (1999) 2319
15. Kruse C., Einfeldt S., Bottcher T., and Hommel D. Appl. Phys. Lett. 79 (2001) 3425
16. Zhang L., Tang H.F., Schieke J., Mavrikakis M., and Kuech T.F. J. Appl. Phys. 92 (2002) 2304
17. Karpov S.Y., Talalaev R.A., Makarov Y.N., Grandjean N., Massies J., and Damilano B. Phys. Stat. Sol. A: Appl. Res. 176 (1999) 333
18. Karpov S.Y., Talalaev R.A., Makarov Y.N., Grandjean N., Massies J., and Damilano B. Surf. Sci. 450 (2000) 191
19. Bakhtizin R.Z., Xue Q.Z., Xue Q.K., Hasegawa Y., Tsong I.S.T., and Sakurai T. Phys. Low-Dimensional Struct. 3-4 (2001) 243
20. Foxon C.T., Cheng T.S., Novikov S.V., Jeffs N.J., Hughes O.H., Melnik Y.V., Nikolaev A.E., and Dmitriev V.A. Surf. Sci. 421 (1999) 377
21. Foxon C.T., Novikov S.V., Cheng T.S., Davis C.S., Campion R.P., Winser A.J., and Harrison I. J. Crystal Growth 219 (2000) 327
22. Hughes W.C., Rowland W.H., Johnson M.A.L., Fujita S., Cook J.W., Schetzina J.F., Ren J., and Edmond J.A. J. Vac. Sci. Technol. B 13 (1995) 1571
23. Kucheyev S.O., Williams J.S., Zou J., Bradby J.E., Jagadish C., and Li G. Phys. Rev. B 6311 (2001) 3202
24. Lin M.E., Strite S., Agarwal A., Salvador A., Zhou G.L., Teraguchi N., Rockett A., and Morkoc H. Appl. Phys. Lett. 62 (1993) 702
25. Pignedoli C.A., Di Felice R., and Bertoni C.M. Phys. Rev. B 64 (2001) 3301
26. Neugebauer J. Phys. Stat. Sol. B-Basic Res. 227 (2001) 93
27. Northrup J.E., and Neugebauer J. Phys. Rev. B 53 (1996) 10477
28. Northrup J.E., DiFelice R., and Neugebauer J. Phys. Rev. B 56 (1997) R4325
29. Northrup J.E., Neugebauer J., Feenstra R.M., and Smith A.R. Phys. Rev. B 61 (2000) 9932
30. Zywietz T., Neugebauer J., and Scheffler M. Appl. Phys. Lett. 73 (1998) 487
31. Zywietz T.K., Neugebauer J., and Scheffler M. Appl. Phys. Lett. 74 (1999) 1695
32. Zywietz T., Neugebauer J., Scheffler M., Northrup J., and Van de Walle C.G. MRS Internet J. Nitride Semiconductor Res. 3 (1998) 1
33. Hammer B., Hansen L.B., and Nørskov J.K. Phys. Rev. B 59 (1999) 7413
34. Greeley J., Nørskov J.K., and Mavrikakis M. Annu. Rev. Phys. Chem. 53 (2002) 319
35. Neugebauer J., and Scheffler M. Phys. Rev. B 46 (1992) 16067
36. Monkhorst H.J., and Pack J.D. Phys. Rev. B 13 (1976) 5188
37. Perdew J.P., Burke K., and Ernzerhof M. Phys. Rev. Lett. 77 (1996) 3865
38. White J.A., and Bird D.M. Phys. Rev. B 50 (1994) 4954
39. Vanderbilt D. Phys. Rev. B 41 (1990) 7892
40. Gokhale A.A., Kuech T.F., and Mavrikakis M. J. Crystal Growth 285 (2005) 146
41. Zoroddu A., Bernardini F., Ruggerone P., and Fiorentini V. Phys. Rev. B 64 (2001) 5208
42. Furthmuller J., Kackell P., Bechstedt F., and Kresse G. Phys. Rev. B 61 (2000) 4576
43. Bechstedt F., Grossner U., and Furthmuller J. Phys. Rev. B 62 (2000) 8003
44. Kresse G., and Furthmuller J. Comput. Mater. Sci. 6 (1996) 15
45. Henkelman G., Uberuaga B.P., and Jónsson H. J. Chem. Phys. 113 (2000) 9901
46. Krekelberg W., Greeley J., and Mavrikakis M. J. Phys. Chem. B 108 (2004) 987
47. Nilekar A.U., Greeley J., and Mavrikakis M. Angew. Chem. Int. Ed. 45 (2006) 7046
48. Gokhale A.A., Huber G.W., Dumesic J.A., and Mavrikakis M. J. Phys. Chem. B 108 (2004) 14062
49. L.C. Grabow, T.F. Kuech, M. Mavrikakis, unpublished results.
50. Xu Y., and Mavrikakis M. Surf. Sci. 538 (2003) 219
51. Gibart P. Rep. Prog. Phys. 67 (2004) 667