Doping-dependence of subband energies in quantized electron accumulation at InN surfaces

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 2, 2007, Pages 536-542

  Veal, T D ^a   Piper, L F J ^a   Phillips, M R ^b   Zareie, M H ^b   Lu, Hai ^c   Schaff, W J ^c   McConville, C F ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELLING SPECTROSCOPY; QUANTIZED ELECTRON ACCUMULATION; TUNNELLING SPECTRA; WURTZITE;

DOPING (ADDITIVES); ELECTRON TUNNELING; FERMI LEVEL; INTERFACES (MATERIALS); INTERFACIAL ENERGY; SURFACE REACTIONS;

INDIUM COMPOUNDS;

EID: 34547160378     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673226     Document Type: Conference Paper

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