Nanoepitaxy to improve the efficiency of InGaN light-emitting diodes

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Zang, K Y ^a   Chua, S J ^b   Teng, J H ^a   Ang, N S S ^a   Yong, A M ^a   Chow, S Y ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Department of Electrical and Computer Engineering   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLIZING; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SILICON; SILICON COMPOUNDS;

ANODIC ALUMINA (AAO); BLUE LIGHT-EMITTING; ETCH MASKS; GAN TEMPLATES; LIGHT-EMITTING DIODES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); NANO POROUS; NANOPORE ARRAYS; SAPPHIRE SUBSTRATES; SI O2 FILMS;

GALLIUM ALLOYS;

EID: 45749084487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949983     Document Type: Article

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