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Applied Physics Letters

Volumn 93, Issue 26, 2008, Pages

In situ strain measurements on GaN/AlGaN Schottky diodes with variable bias

(3) Mahadik, Nadeemullah A a Qadri, Syed B b Rao, Mulpuri V a

a Krasnow Institute for Advanced Study (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

ALGAN/GAN; BIAS CONDITIONS; CARRIER DEPLETIONS; COMPRESSIVE STRAINS; FORWARD BIASES; GAN LAYERS; HIGH RESOLUTIONS; IN-SITU; LINEAR VARIATIONS; PIEZOELECTRIC CHARGES; REVERSE BIASES; SCHOTTKY DIODES; X-RAY DIFFRACTIONS;

TENSILE STRAIN;

EID: 58149233818 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3063125 Document Type: Article

Times cited : (4)

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