High Performance 0.14 μm Gate-Length AlGaN/GaN Power HEMTs on SiC

IEEE Electron Device Letters

Volumn 24, Issue 11, 2003, Pages 677-679

  Jessen, G H ^a   Fitch, R C ^a   Gillespie, J K ^a   Via, G D ^a   Moser, N A ^a   Yannuzzi, M J ^a   Crespo, A ^a   Sewell, J S ^a   Dettmer, R W ^a   Jenkins, T J ^a   Davis, R F ^b   Yang, J ^c   Khan, M Asif ^c   Binari, S C ^d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b North Carolina State University   (United States)

^c The Department of Mechanical Engineering   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

GaN; High electron mobility transistor (HEMT); Power; SiC

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; ELECTRIC POWER MEASUREMENT; PROCESS CONTROL; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; TRANSCONDUCTANCE;

CURRENT GAIN; TRANSFER LENGTH METHOD (TLM);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242493752     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.818816     Document Type: Article

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