Artificial Neural Network (ANN)-Based model for in situ prediction of porosity of nanostructured porous silicon

Materials and Manufacturing Processes

Volumn 24, Issue 1, 2009, Pages 83-87

  Ray, M ^a   Ganguly, S ^a   Das, M ^a   Datta, S ^a   Bandyopadhyay, N R ^a   Hossain, S M ^a  

^a INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

Author keywords

Anodic etching; Artificial neural network; Back propagation algorithm; Fluctuations; Formation mechanism; Formation parameters; Gravimetric method; In homogeneity; Modeling; Nanostructures; Nondestructive technique; Porosity; Porous silicon; Prediction

Indexed keywords

ARTIFICIAL INTELLIGENCE; BACKPROPAGATION; BACKPROPAGATION ALGORITHMS; ETCHING; FORECASTING; HYDROFLUORIC ACID; NANOSTRUCTURES; NEURAL NETWORKS; PARAMETER ESTIMATION; POROSITY;

ANODIC ETCHING; ARTIFICIAL NEURAL NETWORK; BACK PROPAGATION ALGORITHM; FLUCTUATIONS; FORMATION MECHANISM; FORMATION PARAMETERS; GRAVIMETRIC METHOD; IN-HOMOGENEITY; MODELING; NONDESTRUCTIVE TECHNIQUE; PREDICTION;

POROUS SILICON;

EID: 57649239631     PISSN: 10426914     EISSN: 15322475     Source Type: Journal    
DOI: 10.1080/10426910802543848     Document Type: Conference Paper

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