Genetic algorithm based search of parameters for fabrication of uniform porous silicon nanostructure

Computational Materials Science

Volumn 45, Issue 1, 2009, Pages 60-64

  Ray, M ^a   Ganguly, S ^a   Das, M ^a   Hossain, S M ^a   Bandyopadhyay, N R ^a  

^a INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

Author keywords

Anodic etching; Conductivity; Genetic algorithm; Porosity; Porous silicon; Uniformity

Indexed keywords

ALGORITHMS; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ELECTRODES; ETCHING; GENETIC ALGORITHMS; NANOSTRUCTURES; PARTICLE SIZE; PARTICLE SIZE ANALYSIS; PLANNING; POROSITY; SIZE DISTRIBUTION; STRATEGIC PLANNING;

ANODIC ETCHING; CONDUCTIVITY; CRITICAL CURRENT DENSITIES; EFFECTIVE-MEDIUM APPROXIMATIONS; ELECTRICAL CONDUCTIVITIES; ELECTROCHEMICAL FORMATIONS; FORMATION PARAMETERS; GENETIC ALGORITHM; IN-SITU; NANO-STRUCTURED; NARROW BANDS; NON-DESTRUCTIVE; NON-DESTRUCTIVE METHODS; NONLINEAR DEPENDENCES; OPTIMISATION; P-TYPE SI; PARTICLE SIZE DISTRIBUTIONS; POROUS SILICON NANOSTRUCTURES; UNIFORM PORES; UNIFORMITY; UNIFORMITY FACTORS;

POROUS SILICON;

EID: 59749101412     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2008.03.052     Document Type: Article

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