Nondestructive Measurement of Porous Silicon Thickness Using X-Ray Reflectivity

Journal of the Electrochemical Society

Volumn 142, Issue 5, 1995, Pages 1634-1636

  Guilinger, T R ^a   Kelly, M J ^a   Chason, E H ^a   Headley, T J ^a   Howard, A J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ANODIZATION; SINGLE CRYSTAL SILICON SUBSTRATE; X RAY REFLECTIVITY;

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; ELECTROMAGNETIC WAVE SCATTERING; GRAVIMETRIC ANALYSIS; NONDESTRUCTIVE EXAMINATION; POROUS SILICON; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROMAGNETIC WAVE REFLECTION;

EID: 0029307619     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048627     Document Type: Article

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