Application of flicker-noise spectroscopy in studies of porous silicon growth and properties

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 53-58

  Parkhutik, V ^a   Budnikov, E Yu ^b   Timashev, S F ^b  

^a UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

^b KARPOV INSTITUTE OF PHYSICAL CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHAOS THEORY; CURRENT DENSITY; POROUS SILICON; REACTION KINETICS; SEMICONDUCTOR GROWTH; SENSITIVITY ANALYSIS; SPECTROSCOPY;

DETERMINISTIC CHAOS; FLICKER-NOISE SPECTROSCOPY; NONLINEAR DISSIPATIVE SYSTEMS;

SILICON WAFERS;

EID: 0033874832     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00279-2     Document Type: Article

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