Theory of semiconductor superjunction devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6254-6262

  Fujihira, Tatsuhiko ^a,b  

^a FUJI ELECTRIC CO   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Breakdown voltage; On resistance; Power device; Principle; Semiconductor device; Simulation; Superjunction; Theory

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; POWER ELECTRONICS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

SEMICONDUCTOR SUPERJUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031251517     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6254     Document Type: Article

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