Photoresist induced contrast loss and its impact on EUV imaging extendibility

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Van Ingen Schenau, Koen ^a   Hansen, Steve ^b   Pierson, Bill ^b   Van Schoot, Jan ^a  

^a ASML   (Netherlands)

^b ASML US Inc   (United States)

Author keywords

193nm; Contrast loss; EUV; Imaging extendibility; Photoresist

Indexed keywords

EID: 57549099439     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772809     Document Type: Conference Paper

References (21)

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3. See for example P.Naulleau, C.Anderson, B.LaFontaine, R-H.Kim, T.Wallow, "Lithographic metrics, for the determination of intrinsic resolution limits in EUV resists", SPIE 6517, XXX (2007).
4. T. Wallow private communication.
5. See for example Q. Wu, S.Halle, Z.Zhao, "The effect of effective resist diffusion length to the photolithography at 65and 45nm nodes, a study with simple and accurate analytical equations", SPIE 5377, 1510 (2004),
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12. These authors prefer to report √2*σ corresponding to the diffusion distance at the end of the bake time, D.vanSteenwinckel, R.Gronheid, J.Lammers, A.Myers, F.vanRoey, P.Willems, "A novel method for characterizing resist performance", SPIE 6519 XXX (2007).
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15. See for example S.Hansen, "Resist vector: connecting the aerial image to reality", SPIE 4690, 366 (2002);
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18. Whichever best... Gallatin
19. H. Meiling et al., "Update on the EUV program at ASML", EUVL Symposium 2007
20. H. Solak et al., "Photon-Beam Lithography Reaches 12.5 nm Half-pitch Resolution", EIPBN 2006
21. S. Robertson et al, SPIE Vol. 4690, pp xxx (2002)