Lithographic metrics for the determination of intrinsic resolution limits in EUV resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6517, Issue PART 2, 2007, Pages

  Naulleau, Patrick P ^a,b   Anderson, Christopher N ^c   La Fontaine, Bruno ^d   Kim, Ryoung Han ^d   Wallow, Tom ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

Extreme ultraviolet; Lithography; Photoresist; Resolution

Indexed keywords

INTRINSIC RESIST RESOLUTION LIMITS; RESIST RESOLUTION; TRANSFER FUNCTION;

DIFFUSION; OPTICAL RESOLVING POWER; PHOTORESISTS;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 35148855730     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712363     Document Type: Conference Paper

References (16)

1. 4th International EUVL Symposium Steering Committee, San Diego, CA, November 7-9, 2005, proceedings available from SEMATECH, Austin, TX.
2. 2006 International Symposium on Extreme Ultraviolet Lithography Steering Committee, Barcelona, Spain, October 15-18, 2006, proceedings available from SEMATECH, Austin, TX.
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