Influence of resist blur on ultimate resolution of ArF immersion lithography

Journal of Microlithography, Microfabrication and Microsystems

Volumn 5, Issue 4, 2006, Pages

  Honda, Tokuyuki ^a   Kishikawa, Yasuhiro ^a   Iwasaki, Yuichi ^a   Ohkubo, Akinori ^a   Kawashima, Miyoko ^a   Yoshii, Minoru ^a  

^a CANON INC   (Japan)

Author keywords

Acid diffusion; Chemically amplified photoresist; Immersion; Interferometric; Lithography

Indexed keywords

AMPLIFICATION; IMAGE RESOLUTION; INTERFEROMETRY; PHOTODEGRADATION; PHOTOLITHOGRAPHY;

ACID DIFFUSION; CHEMICALLY AMPLIFIED PHOTORESISTS; IMMERSION; INTERFEROMETRIC EXPOSURE TOOLS;

PHOTORESISTS;

EID: 33947182159     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.2397018     Document Type: Article

References (11)

1. H. Ito, "Chemical amplification resists: History and development within IBM," IBM J. Res. Dev. 41, 69-80 (1997).
2. T. Brunner, C. Fonseca, N. Seong, and M. Burkhardt, "Impact of resist blur on MEF, OPC, and CD control," Proc. SPIE 5377, 141-149 (2004).
3. P. Dirksen, J. Braat, A. J. E. M. Janssen, A. Leeuwestein, H. Kwinten, and D. V. Steenwickel, "Determination of resist parameters using extended Nijboer-Zernike theory," Proc. SPIE 5377, 150-159 (2004).
4. G. M. Schmid, M. D. Stewart, C.-Y. Wang, B. D. Vogt, V. M. Prabhu, E. K. Lin, and C. G. Willson, "Resolution limitations in chemically amplified photoresist systems," Proc. SPIE 5376, 333-342 (2004).
5. A. Grassmann and H. Moritz, "Contrast transfer function measurements of deep ultraviolet steppers," J. Vac. Sci. Technol. B 10, 3008-3011 (1992).
6. J. A. Hoffnagle, W. D. Hinsberg, M. I. Sanchez, and F. A. Houle, "Method of measuring the spatial resolution of a photoresist," Opt. Lett. 27, 1776-1778 (2002).
7. C. Kittel and H. Kroemer, in Thermal Physics, 2nd ed., W. H. Freeman and Company, New York (1980), Chap. 14-15.
8. T. Miyamatsu, Y. Wang, M. Shima, S. Kusumoto, T. Chiba, H. Nakagawa, K. Hieda, and T. Shimokawa, "Material design for immersion lithography with high refractive index fluid (HIF)," Proc. SPIE 5753, 10-19 (2005).
9. R. French, H. Sewell, M. K. Yang, S. Peng, D. McCfferty, W. Qiu, R. C. Wheland, M. F. Lemon, L. Markoya, and M. K. Crawford, "Imaging of 32-nm 1:1 lines and spaces using 193-nm immersion interference lithography with second-generation immersion fluids to achieve a numerical aperture of 1.5 and a k1 of 0.25," J. Microlithogr., Microfabr., Microsyst. 4, 031103-1-031103-13 (2005).
10. J. Santillan, A. Otoguro, T. Itani, K. Fujii, A. Kagayama, T. Nakano, N. Nakayama, H. Tamatani, and S. Fukuda, "Novel high refractive index fluids for 193 nm immersion lithography," Proc. SPIE 6154, 1592-1599 (2006).
11. J. P. Cain, P. Naulleau, and C. J. Spanos, "Resist-based measurement of the contrast transfer function in a 0.3-NA EUV microfield optic," Proc. SPIE 5751, 741-748 (2005).