The effect of the effective resist diffusion length to the photolithography at 65 and 45 nm nodes, a study with simple and accurate analytical equations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5377, Issue PART 3, 2004, Pages 1510-1521

  Wu, Qiang ^a   Halle, Scott ^a   Zhao, Zengqin ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

193 nm lithography; Alternating phase shifting mask; And 157 nm lithography; Overlay tolerance; Phase error; PSM; Resist blur; Resist diffusion length; Tolerable phase error

Indexed keywords

157 NM LITHOGRAPHY; 193 NM LITHOGRAPHY; ALTERNATING PHASE SHIFTING MASKS; OVERLAY TOLERANCE; PHASE ERRORS; PSM; RESIST BLUR; RESIST DIFFUSION LENGTH; TOLERABLE PHASE ERRORS;

DIFFUSION; ERROR ANALYSIS; FREQUENCIES; IMAGE ANALYSIS; LIGHTING; MASKS; PHASE SHIFT;

PHOTORESISTS;

EID: 3843100284     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.544255     Document Type: Conference Paper

References (11)

1. J.A. Hoffnagle, W.D. Hinsberg, F. A. Houle, and M.I. Sanchez, "Characterization of Photoresists Spatial Resolution by Interferometric Lithography", Proc. SPIE 5038-46 (2003), and references therein.
2. F.A. Houle, W.D. Hinsberg, M.I. Sanchez, and J.A. Hoffnagle, "Influence of Resist Components on Image Blur in a Patterned Positive-tone Chemically Amplified Photoresist", J. Vac. Sci. Technol. B 20, 924 (2002).
3. Chang-Nam Ahn, Hee-Bom Kim, and Ki-Ho Baik, "A Novel Approximate Model for Resist Process", Proc. SPIE 3334, 752 (1998).
4. K. Hattori, J. Abe, and H. Fukuda, "The Accuracy of Simulation Based on The Acid-Quencher Mutual Diffusion Model in KrF Processes", Proc. SPIE 4691, 1243 (2002).
5. C. A. Mack, "Analytical Approach to Understanding the Impact of Mask Errors on Optical Lithography", Proc. SPIE 4000, 215 (2000).
6. J. Randall, C. Baum, K. Kim, and M. Mason, "The Mask Error Factor Impact on the 130 nm Node", Proc. SPIE 4000, 594 (2000).
7. I. Jekauc, B. Roberts, and C. Hampe, "Mask Error Factor-Critical Dimension Variation Across Different Tools, Features, and Exposure Conditions", Proc. SPIE 4346, 842 (2001).
8. K. Kim, Y.S. Choi, R. Socha, and D. Flagello, "Optimization of Process Condition to Balance MEF and OPC for Alternating PSM-Control of Forbidden Pitches-", Proc. SPIE 4691, 240 (2002).
9. Seok-Hwan OH, Hyoung-Kook Kim, Dae-Joung Kim, Young-Seok Kim, Chun-Suk Suh, Yong-Sun Koh, and Chang-Lyong Song, "Is it Possible to Improve MEEF?", Proc. SPIE 4691, 1383 (2002).
10. S.K. Tan, Q. Lin, G.S. Chua, C. Quan, and C.J. Tay, "MEF Studies for Attenuated Phase Shift Mask for sub 0.13 μm Technology Using 248 nm", Proc. SPIE 4691, 1366 (2002).
11. 1 Effects versus Mask Topography Effects", Proc. SPIE 5040, 193 (2003).